Product Summary

The AO4478L is an N-Channel Enhancement Mode Field Effect Transistor. The AO4478L uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications.

Parametrics

AO4478L absolute maximum ratings: (1)TJ, TSTG, Junction and Storage Temperature Range: -55 to 150℃; (2)Power Dissipation, PD: 3.1W at TA=25℃; 2.0W at TA=70℃; (3)Gate-Source Voltage, VGS: ±25V; (4)Drain-Source Voltage, VDS: 30V; (5)Continuous Drain Current, ID: 9.0A at TA=25℃; 7.0A at TA=70℃; (6)Avalanche Current, Iar: 17A; (7)Repetitive avalanche energy L=0.1mH, Ear: 14mJ; (8)Pulsed Drain Current, IDM: 60A.

Features

AO4478L features: (1)VDS (V) = 30V; (2)ID = 9A (VGS = 10V); (3)RDS(ON) <19mΩ (VGS = 10V); (4)RDS(ON) <26mΩ (VGS = 4.5V); (5)100% UIS Tested; (6)100% Rg Tested.

Diagrams

AO4478L block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4478L
AO4478L
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Data Sheet
Negotiable 
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