Product Summary
The SI4128DY-TI-GE3 is an N-Channel 30-V (D-S) MOSFET. It is suitable for Notebook PC, System Power, Load Switch.
Parametrics
SI4128DY-TI-GE3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ± 20V; (3)Continuous Drain Current (TJ = 150℃), ID: 10.9A at TC = 25℃; 8.7A at TC = 70℃; 7.5A at TA = 25℃; 6A at TA = 70℃; (4)Pulsed Drain Current, IDM: 30A; (5)Continuous Source-Drain Diode Current, IS: 4.2A at Tc=25℃; 2A at TA = 25℃; (6)Maximum Power Dissipation, PD: 5W at TC = 25℃; 3.2W at TC = 70℃; 2.4W at TA = 25℃; 1.5W at TA = 70℃; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: - 55 to 150℃.
Features
SI4128DY-TI-GE3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested.
Diagrams
Si4100DY |
Other |
Data Sheet |
Negotiable |
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Si4100DY-T1-E3 |
Vishay/Siliconix |
MOSFET 100V 6.8A 6.0W |
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SI4100DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 100V 6.8A 6.0W 63mohm @ 10V |
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Si4102DY |
Other |
Data Sheet |
Negotiable |
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SI4102DY-T1-E3 |
Vishay/Siliconix |
MOSFET 100V 3.8A 4.8W |
Data Sheet |
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SI4102DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 100V 3.8A 4.8W 158mohm @ 10V |
Data Sheet |
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