Product Summary

The MRF157 is a power field effect trabsistor. It is designed primarily for linear large–signal output stages to 80 MHz.

Parametrics

MRF157 absolute maximum ratings:(1)Drain–Source Voltage, VDSS: 125Vdc; (2)Drain–Gate Voltage, VDGO: 125Vdc; (3)Gate–Source Voltage, VGS: ±40Vdc; (4)Drain Current — Continuous, ID: 60Adc; (5)Total Device Dissipation at TC = 25℃, PD: 1350Watts; (6)Total Device Dissipation at Derate above 25℃, PD: 7.7W/℃; (7)Storage Temperature Range, Tstg: –65 to +150℃; (8)Operating Junction Temperature, TJ: 200℃.

Features

MRF157 features: (1)Specified 50 Volts, 30 MHz; (2)Output Power = 600 Watts; (3)Power Gain = 21 dB (Typ); (4)Efficiency = 45% (Typ).

Diagrams

MRF157 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF157
MRF157
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB
Data Sheet
0-1: $309.00
1-10: $295.20
MRF1570FNT1
MRF1570FNT1
Freescale Semiconductor
Transistors RF MOSFET Power RF LDMOS TO272-6N FLAT
Data Sheet
0-386: $12.83
386-500: $12.83
MRF1570FT1
MRF1570FT1
Other

Data Sheet
Negotiable 
MRF1570NT1
MRF1570NT1
Freescale Semiconductor
Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED
Data Sheet
0-271: $18.30
271-500: $13.19
MRF1570T1
MRF1570T1
Other

Data Sheet
Negotiable