(China (Mainland))
Product Summary
The MRF157 is a power field effect trabsistor. It is designed primarily for linear large–signal output stages to 80 MHz.
Parametrics
MRF157 absolute maximum ratings:(1)Drain–Source Voltage, VDSS: 125Vdc; (2)Drain–Gate Voltage, VDGO: 125Vdc; (3)Gate–Source Voltage, VGS: ±40Vdc; (4)Drain Current — Continuous, ID: 60Adc; (5)Total Device Dissipation at TC = 25℃, PD: 1350Watts; (6)Total Device Dissipation at Derate above 25℃, PD: 7.7W/℃; (7)Storage Temperature Range, Tstg: –65 to +150℃; (8)Operating Junction Temperature, TJ: 200℃.
Features
MRF157 features: (1)Specified 50 Volts, 30 MHz; (2)Output Power = 600 Watts; (3)Power Gain = 21 dB (Typ); (4)Efficiency = 45% (Typ).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF157 |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB |
Data Sheet |
|
|
||||||||
|
MRF1570FNT1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF LDMOS TO272-6N FLAT |
Data Sheet |
|
|
||||||||
 |
MRF1570FT1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
MRF1570NT1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED |
Data Sheet |
|
|
||||||||
|
MRF1570T1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
